p-channel enhancement mode field effect transistor absolute maxium ratings
t a =25 unless otherwise noted parameter symbol limit unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v i d -5.3 a drain current-continuous a @tj=125 - pulse b d i dm -24 a drain-source diode forward current a i s -1.7 a maximum power dissipation a p d 2.5 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal characteristics thermal resistance, junction-to ambient a rth j a 50 /w http//www.mtsemi.com 1 features super high dense cell design for low r ds(on) rugged and reliable s imple drive requirement sop-8 package product summary v dss i d r ds(on) (m $ ) typ 46@ v gs =-10v -30v -5.3a 78 @ v gs =-4.5v MT4953 mos-tech semiconductor corp mt note the MT4953 is available in a lead-free package www.datasheet.co.kr datasheet pdf - http://www..net/
MT4953 electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v,i d =-250 a -30 v zero gate voltage drain current i dss v ds =-24v,v gs =0v -1 a gate-body leakage i gss v gs =20v,v ds =0v 100 na on characteritics gate threshold voltage v gs (th) v ds =v gs ,i d =-250 a -1 -1.5 -2.5 v v gs =-10v,i d =-5.6a 46 55 drain-source on-state resistance r ds(on) v gs =-4.5v,i d =-4.2a 78 85 m $ forward transconductance ? fs v gs =-5v,i d =-5.6a 5 s daynamic characteristics input capacitance c iss 582 pf output capacitance c oss 125 pf reverse transfer capacitance c rss v ds =-15v,v gs =0v f=1.0mh z 86 pf switching characterisistics turn-on delay time t d(on) 9 ns rise time tr 10 ns turn-off delay time t d(off) 38 ns fall time tf v dd =-15v i d =-5.3a, v gen =-4.5v r l =10ohm r gen =10ohm 23 ns total gate charge q ? 11.7 nc gate-source charge q ? s 2.1 nc gate-drain charge q ? d v ds =-15v,i d =-1a v gs =-10v 2.9 nc http//www.mtsemi.com 2 www.datasheet.co.kr datasheet pdf - http://www..net/
MT4953 electrical char acterics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit drain-source diode characteristics diode forward voltage v sd v gs =0v,i s =-1.7a -0.84 -1.2 v notes a. surface mounted on fr4 board, t &? 10sec b. pulse test: pulse width &? 300us, duty &? 2 c. guaranteed by design, not subject to production testing. 7 % 4
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% s b j o u p 4 p v s d f 7 p m u b h f ' j h v s f $ b q b d j u b o d f ' j h v s f 0 o 3 f t j t u b o d f 7 b s j b u j p o x j u i 5 f n q f s b u v s f http//www.mtsemi.com 3 -i d , d r ain current ( a ) -i d , drain current ( a ) c , ca p acitance ( p f ) r ds ( on ) , on-resistance ( m $
v gs =-10v i d =-5.6a www.datasheet.co.kr datasheet pdf - http://www..net/
--50 -25 0 25 50 75 100 125 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 --50 -25 0 25 50 75 100 125 20 10 1.0 0.4 0.6 0.7 0.9 1.1 1.3 0 2 4 6 8 10 12 14 10 0 5 10 15 20 MT4953 4 vth, normalized gate-source threshold voltage bv dss , normalized drains-source breakdown 1.15 1.10 1.05 1.00 0.95 0.90 0.85 tj,. junction temperature(
figure5.gate threshold variation with temperature tj, .junction temperature (
figure6.breakdown voltage variation with temperature ? ' 4
5 s b o t d p o e v d u b o d f 4
-is , source-drain current ( a ) -i ds , drain-source current (a) figure7.transconductance variation with drain current -v gs , gate to source volta g e 50 10 1 0.1 0.03 -v sd , body diode forward voltage figure8.body diode forward voltage variation with source current 0 2 4 6 8 0.1 1 10 30 50 q ?
5 p u b m ( b u f $ i b s h f nc) figure9. gate charge -v ds , drain-source voltage(v) figure10.maximum safe operating area -i d ,drain current ( a ) http//www.mtsemi.com v ds =v gs i d =-250ua id=-250ua tj=25 v ds =-10v i d =-5.3a v gs =-15v 0 2 4 6 8 10 www.datasheet.co.kr datasheet pdf - http://www..net/
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